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STU90N4F3

Part No STU90N4F3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1104008-STU90N4F3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STU90N4F3 CAD Model

Description

Introducing the STU90N4F3 Power MOSFET by STMicroelectronics

The STU90N4F3 is a high-performance Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader renowned for its cutting-edge technology. This particular MOSFET is part of the STripFET™ F3 series, which is designed to deliver high efficiency and power density with low on-resistance and minimal gate charge. The STU90N4F3 is an ideal choice for a wide range of applications, including switch-mode power supplies, DC-DC converters, motor control circuits, and general-purpose switching applications.

Key Features of STU90N4F3

  • Low On-Resistance: The STU90N4F3 boasts an ultra-low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of up to 80 A, this MOSFET can handle high current loads, making it suitable for demanding applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and robustness in harsh conditions.
  • Low Gate Charge: The device has a low gate charge (Q<sub>g), which reduces switching losses and enables fast switching speeds.
  • Low Threshold Voltage: The low threshold voltage (V<sub>GS(th)) allows for the MOSFET to be easily driven at lower gate voltages, enhancing its compatibility with a variety of drive circuits.

Applications

The versatility of the STU90N4F3 makes it suitable for a broad range of applications. It is particularly well-suited for:

  • High-efficiency DC/DC converters
  • Power management in computing and telecom systems
  • Synchronous rectification for switch-mode power supplies
  • Motor drives and controls in industrial and automotive systems
  • Load switches and battery management in portable devices

The STU90N4F3 is encapsulated in a surface-mount DPAK package, which not only saves space on the PCB but also provides excellent thermal performance. Its design is optimized to minimize on-state resistance while maintaining superior switching performance and reliability, which are critical in high-efficiency power conversion.

STMicroelectronics' commitment to innovation is evident in the STU90N4F3 Power MOSFET, making it a smart choice for designers looking to enhance the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3144 $59.1480
110+ $1.0788 $118.6680
170+ $1.0453 $177.7010
230+ $1.0106 $232.4380
300+ $0.9771 $293.1300
400+ $0.8766 $350.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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