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STU9HN65M2

Part No STU9HN65M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Zener-protected | MOSFET N-CH 650V 5.5A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 5.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 820mOhm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 325pF at 100V
Power Dissipation (Maximum) 60W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package I-PAK
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1262276-STU9HN65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STU9HN65M2 CAD Model

Description

STU9HN65M2 - N-Channel 650 V, 7 A MDmesh™ M2 Power MOSFET

The STU9HN65M2 is a high-performance N-Channel Power MOSFET designed by STMicroelectronics, a global leader in semiconductor solutions. This device is part of the MDmesh™ M2 series, which utilizes an innovative proprietary vertical structure that enables excellent on-resistance and high dv/dt capability, making it ideal for a wide range of high-efficiency applications.

Key Features

  • Voltage Rating: The STU9HN65M2 is rated at 650 V, making it suitable for high-voltage applications.
  • Current Handling: With a continuous drain current of 7 A, this MOSFET can handle significant power levels.
  • Low On-Resistance: This device features an extremely low on-resistance (R<sub>DS(on)), minimizing conduction losses.
  • High dv/dt Capability: It is capable of withstanding high voltage transients, ensuring reliability in rugged environments.
  • Zener-Protected: The gate-source is protected by an integrated Zener diode, enhancing the MOSFET's robustness against overvoltage conditions.

Applications

The STU9HN65M2 is designed for a multitude of applications, including:

  • Switching power supplies
  • LED lighting solutions
  • High-efficiency DC-DC converters
  • Power management in solar energy systems
  • Motor control circuits

Benefits

Integrating the STU9HN65M2 into your design offers numerous benefits:

  • Energy Efficiency: The low on-resistance and high switching speed reduce power losses, enhancing overall energy efficiency.
  • Thermal Performance: The device's structure is optimized for superior thermal performance, ensuring stability under varying operational conditions.
  • Enhanced Reliability: The built-in Zener diode protection and high dv/dt capability contribute to the MOSFET's reliability and longevity.
  • Flexibility: The STU9HN65M2's versatile characteristics make it suitable for a broad range of power applications.

With its advanced technology and robust design, the STU9HN65M2 from STMicroelectronics represents a top-tier component for designers looking to improve the efficiency and reliability of their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8494 $59.4580
170+ $0.6971 $118.5070
260+ $0.6752 $175.5520
355+ $0.6534 $231.9570
460+ $0.6317 $290.5820
615+ $0.5663 $348.2745
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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