The STW11NM80 from STMicroelectronics is a high-performance, N-channel Power MOSFET designed to deliver efficient power conversion in a variety of electronic applications. This device is part of ST's MDmesh™ family, which utilizes an innovative vertical process technology to create MOSFETs with a low on-resistance and high blocking voltage.

Key Features

• High Voltage Capability: With a drain-source voltage (V<sub>DS) of 800V, the STW11NM80 is suitable for high voltage applications, ensuring reliability and robustness in demanding conditions.
• Low On-Resistance: The device boasts a low on-resistance (R<sub>DS(on)) of 0.65Ω, which translates to reduced conduction losses and improved overall efficiency in power conversion circuits.
• High Current Rating: It has a continuous drain current (I<sub>D) of 11A, allowing it to handle significant current loads without performance degradation.
• MDmesh™ Technology: The MOSFET utilizes ST's proprietary MDmesh technology, which combines a vertical structure with a charge-balanced doping profile to minimize on-state resistance while maintaining a high breakdown voltage.
• TO-247 Package: The robust TO-247 package provides excellent thermal performance and is suited for through-hole mounting, which is beneficial for heat dissipation and ease of integration into various circuit designs.

Applications

The STW11NM80 is versatile and can be used in a wide range of applications, including:

• Switching applications
• Power supplies
• Motor control
• Lighting
• Inverters
• High-performance computing

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STW11NM80 is subjected to rigorous testing and quality control measures to ensure it meets the industry standards for performance and reliability. This Power MOSFET is a testament to ST's dedication to providing innovative solutions for power management challenges.