STW13N60M2 - N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh™ M2 Power MOSFET in a TO-247 package from STMicroelectronics
The STW13N60M2 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This device is a part of the MDmesh™ M2 series, which is well-known for its excellent energy efficiency and performance in high-voltage applications.
With a drain-source voltage (V<sub>DS) of 600 V, the STW13N60M2 is capable of handling high voltage conditions, making it an ideal choice for a variety of power conversion systems. Its low on-resistance (R<sub>DS(on)) of typically 0.28 Ohm ensures minimal power loss during operation, which enhances the overall efficiency of the application it is used in.
The device is designed to deliver a continuous drain current (I<sub>D) of 11 A, which makes it suitable for high-power applications. The TO-247 package provides a robust and durable housing for the MOSFET, ensuring reliable performance even under harsh conditions.
Key features of the STW13N60M2 include its MDmesh™ M2 technology, which optimizes the device for high switching frequencies and reduced gate charge (Q<sub>g). This technology also provides lower recovery charge (Q<sub>rr), which is beneficial in reducing switching losses in applications such as switch-mode power supplies (SMPS), lighting, welding, solar inverters, and other power converters.
Additionally, the STW13N60M2 boasts a 100% avalanche tested design, which guarantees robustness and reliability in applications where the device may be subjected to high-energy pulses. The device also features Zener-protected gate, which protects against electrostatic discharges and ensures the stability of the gate oxide layer.
Overall, the STW13N60M2 from STMicroelectronics is a high-performance Power MOSFET that offers a combination of high voltage capability, low on-resistance, high current handling, and energy-efficient operation. Its advanced features make it a top choice for designers and engineers looking to enhance the performance and reliability of their power management systems.