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STW13N60M2

Part No STW13N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features N-Channel 600 V 11A (Tc) 110W (Tc) Through Hole TO-247-3
Manufacturer STMicroelectronics
Series MDmesh™ II Plus
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247-3
Family Name STW13N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -497-15012-5, 497-15012-5
Quantity per package 30
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935667-STW13N60M2
Ultra Librarian 3D Model Ultra Librarian STW13N60M2 CAD Model

Description

STW13N60M2 - N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh™ M2 Power MOSFET in a TO-247 package from STMicroelectronics

The STW13N60M2 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This device is a part of the MDmesh™ M2 series, which is well-known for its excellent energy efficiency and performance in high-voltage applications.

With a drain-source voltage (V<sub>DS) of 600 V, the STW13N60M2 is capable of handling high voltage conditions, making it an ideal choice for a variety of power conversion systems. Its low on-resistance (R<sub>DS(on)) of typically 0.28 Ohm ensures minimal power loss during operation, which enhances the overall efficiency of the application it is used in.

The device is designed to deliver a continuous drain current (I<sub>D) of 11 A, which makes it suitable for high-power applications. The TO-247 package provides a robust and durable housing for the MOSFET, ensuring reliable performance even under harsh conditions.

Key features of the STW13N60M2 include its MDmesh™ M2 technology, which optimizes the device for high switching frequencies and reduced gate charge (Q<sub>g). This technology also provides lower recovery charge (Q<sub>rr), which is beneficial in reducing switching losses in applications such as switch-mode power supplies (SMPS), lighting, welding, solar inverters, and other power converters.

Additionally, the STW13N60M2 boasts a 100% avalanche tested design, which guarantees robustness and reliability in applications where the device may be subjected to high-energy pulses. The device also features Zener-protected gate, which protects against electrostatic discharges and ensures the stability of the gate oxide layer.

Overall, the STW13N60M2 from STMicroelectronics is a high-performance Power MOSFET that offers a combination of high voltage capability, low on-resistance, high current handling, and energy-efficient operation. Its advanced features make it a top choice for designers and engineers looking to enhance the performance and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4524 $50.8340
85+ $1.1917 $101.2945
130+ $1.1545 $150.0850
180+ $1.1172 $201.0960
235+ $1.0800 $253.8000
310+ $0.9683 $300.1730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,620 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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