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STW16N65M5

Part No STW16N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 12A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1250pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 279 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1104028-STW16N65M5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW16N65M5 CAD Model

Description

STW16N65M5 - Power MOSFET by STMicroelectronics

The STW16N65M5 is a high-performance, N-channel Power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is a part of the MDmesh™ M5 series, which is well-known for its excellent energy efficiency and high power density. The STW16N65M5 is specifically designed to address the demanding requirements of high-power applications, making it an ideal choice for switch-mode power supplies, power converters, motor drivers, and a variety of other power management tasks.

With a drain-source voltage (V<sub>DS) of 650V, the STW16N65M5 can handle high voltage operations with ease. The device also features a low on-resistance (R<sub>DS(on)) of 0.165 Ω, which ensures minimal power loss during operation, thereby enhancing overall efficiency. Its maximum continuous drain current (I<sub>D) is rated at 16A, allowing for the handling of significant power without performance degradation.

The STW16N65M5 incorporates STMicroelectronics' state-of-the-art MDmesh™ technology, which utilizes a proprietary vertical structure. This technology provides the benefit of reduced on-resistance and lower gate charge (Q<sub>g), leading to faster switching speeds and improved overall performance. Furthermore, the device boasts a low gate threshold voltage (V<sub>GS(th)), which allows for easy drive capability and is particularly useful in applications where drive power is limited.

This power MOSFET is also designed with a 100% avalanche tested ruggedness, which ensures reliability and robustness in harsh environments. Additionally, the STW16N65M5 features Zener-protected gate, which provides enhanced protection against overvoltage, thus ensuring a longer lifespan for your electronic designs.

In summary, the STW16N65M5 from STMicroelectronics is a top-of-the-line power MOSFET that combines high voltage capability, low on-resistance, and fast switching speeds with the reliability and energy efficiency required for advanced power management applications. Whether you are designing power supplies or looking to improve the efficiency of motor controls, the STW16N65M5 is a compelling component that offers superior performance in a wide range of electronic circuits.

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