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STW200NF03

Part No STW200NF03
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 120A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 280nC @ 10V
Max Input Capacitance 10000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 350W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1104032-STW200NF03
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW200NF03 CAD Model

Description

Introducing the STW200NF03 MOSFET by STMicroelectronics

The STW200NF03 is a robust and high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This MOSFET is part of the STripFET™ III series, which is renowned for providing low on-resistance and low gate charge, making it an excellent choice for high-efficiency power management applications.

With a standard TO-247 package, the STW200NF03 offers a perfect balance between high current handling capability and compactness, making it suitable for a wide range of applications. It has a maximum continuous drain current (ID) of 120A, which allows it to handle significant power without overheating. The device is also characterized by a low threshold voltage (VGS(th)), ensuring it can be easily driven by a variety of control circuits.

The MOSFET's maximum drain-source voltage (VDSS) is rated at 30V, which provides a good margin for typical 12V and 24V systems, making it ideal for automotive applications, high-efficiency DC-DC converters, and motor control circuits. Its low on-state resistance (RDS(on)) of just 3.3 mΩ at VGS=10V helps to minimize power losses and improve overall system efficiency, which is critical in power-sensitive designs.

Moreover, the STW200NF03 features a 100% avalanche tested design, which guarantees robustness and reliability even under the most demanding conditions. This makes it particularly suitable for applications that may experience unexpected voltage transients.

For designers and engineers looking to incorporate the STW200NF03 into their systems, STMicroelectronics provides comprehensive technical documentation, including datasheets, application notes, and design resources. This support ensures that integrating the STW200NF03 into your design is as seamless and straightforward as possible, reducing time to market and enhancing the reliability of the end product.

In summary, the STW200NF03 from STMicroelectronics is a powerful, efficient, and reliable solution for a wide array of power management applications. Its excellent thermal and electrical characteristics make it an outstanding choice for designers seeking to optimize their systems for performance and efficiency.

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