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STW23NM50N

Part No STW23NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 17A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1330pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 8.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1104035-STW23NM50N
Family Name STW23NM50N
Introduction Date December 11, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW23NM50N CAD Model

Description

The STW23NM50N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is a part of their MDmesh™ technology line. This device is tailored for applications requiring high efficiency and power density. The STW23NM50N is designed to handle a drain-source voltage (V<sub>DS) of up to 500V, which makes it particularly suitable for high voltage applications.

Key Features

  • High Voltage Rating: With a maximum V<sub>DS of 500V, the STW23NM50N is capable of operating in environments where high voltages are a norm, making it ideal for switching applications such as power supplies and converters.
  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)) of 0.19Ω, which translates to reduced conduction losses and improved overall efficiency.
  • High Current Capability: A continuous drain current (I<sub>D) of 23A allows the MOSFET to handle significant power levels, making it suitable for high-power applications.
  • TO-247 Package: The robust TO-247 package ensures good heat dissipation and high current handling capability, which is crucial for maintaining reliability and performance in demanding conditions.
  • MDmesh™ Technology: This proprietary technology from STMicroelectronics provides an optimal balance between on-resistance and gate charge, leading to high efficiency and faster switching performance.
  • 100% Avalanche Tested: Guaranteeing enhanced reliability, each unit is tested for avalanche ruggedness, ensuring the MOSFET can withstand harsh operating conditions.

Applications

The STW23NM50N is versatile and can be used in a wide range of applications. It is particularly well-suited for:

  • Switching applications
  • High-efficiency DC/DC converters
  • Power supplies for telecom and server systems
  • Synchronous rectification
  • Solar inverters
  • Welding equipment

With its combination of high voltage capacity, low resistance, high current capability, and efficient switching performance, the STW23NM50N from STMicroelectronics represents a reliable and efficient solution for designers looking to improve power management in their high-performance electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0340 $61.0200
70+ $1.6690 $116.8300
110+ $1.6170 $177.8700
150+ $1.5650 $234.7500
195+ $1.5131 $295.0545
260+ $1.3560 $352.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 400 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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