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STW24N60DM2

Part No STW24N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series FDmesh II Plus
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1055pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 150W (Tc)
Rds On (Maximum) @ Id, Vgs 200 mOhm @ 9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 1262355-STW24N60DM2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STW24N60DM2
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STW24N60DM2 CAD Model

Description

STW24N60DM2 - High-Performance N-Channel MOSFET by STMicroelectronics

The STW24N60DM2 is a state-of-the-art N-channel MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This power MOSFET is a part of ST's MDmesh™ DM2 series, which is well-known for its excellent energy efficiency and performance in a wide range of applications. The device is specifically engineered to address the demanding requirements of high-power density applications while maintaining low on-resistance and high switching performance.

Constructed with advanced ST's second generation MDmesh technology, the STW24N60DM2 boasts an optimal R<sub>DS(on) area combined with reduced gate charge (Q<sub>g), which facilitates superior power efficiency and faster switching speeds. This makes it an ideal choice for applications such as switch-mode power supplies (SMPS), lighting, welding, solar inverters, and other power conversion systems.

The device features a maximum continuous drain current (I<sub>D) of 24 A, allowing it to handle substantial power levels. With a drain-source voltage (V<sub>DS) of 600 V, it provides a generous safety margin for voltage spikes and transients, ensuring reliable operation under harsh conditions. Moreover, the STW24N60DM2 is characterized by a low threshold voltage (V<sub>th), enhancing its performance at lower gate voltages and making it suitable for a variety of control applications.

The package of the STW24N60DM2 is designed to optimize the thermal performance and minimize the package resistance. The robustness of the device is further enhanced by its 100% avalanche tested design, which guarantees reliability and longevity even in extreme conditions. Additionally, the MOSFET is compliant with the European Union's stringent RoHS and REACH regulations, reflecting STMicroelectronics' commitment to environmental sustainability.

In summary, the STW24N60DM2 from STMicroelectronics is a high-performance N-channel MOSFET that offers a compelling combination of efficiency, reliability, and power handling capabilities. Its advanced features and robust design make it a top choice for engineers looking to improve the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.8434 $53.8076
32+ $3.1535 $100.9120
50+ $3.0550 $152.7500
68+ $2.9564 $201.0352
88+ $2.8579 $251.4952
118+ $2.5623 $302.3514
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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