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STW25N80K5

Part No STW25N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 800V 19.5A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 800V 19.5A TO247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1600pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 260 mOhm @ 19.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 212431-STW25N80K5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial
Family Name STW25N80K5
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian STW25N80K5 CAD Model

Description

STW25N80K5 - Power MOSFET by STMicroelectronics

The STW25N80K5 is a high-performance, N-channel Power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the MDmesh™ K5 series, which is renowned for its extremely low on-resistance (R<sub>DS(on)) and high dv/dt capability, making it an excellent choice for a wide range of high-efficiency applications.

Key Features

  • High Voltage Capability: The STW25N80K5 is designed to handle a maximum voltage of 800V, providing a wide safety margin for applications that experience high voltage spikes or surges.
  • Low On-Resistance: With an R<sub>DS(on) of just 0.190 Ω, this MOSFET minimizes conduction losses, which enhances overall efficiency and performance.
  • High Current Handling: This device is capable of supporting a continuous drain current of 21 A, making it suitable for high-power applications.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) ensures faster switching performance, which is critical for reducing switching losses in power conversion systems.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.
  • Zener-Protected: The MOSFET features built-in gate-source Zener diodes for enhanced ESD protection.

Applications

The STW25N80K5 is ideal for a variety of applications, particularly those requiring high efficiency and power density. Some of the typical applications include:

  • Switching power supplies
  • Power converters and inverters
  • Motor control systems
  • Lighting applications
  • High-performance computing

Quality and Reliability

STMicroelectronics is committed to delivering products of the highest quality. The STW25N80K5 is no exception, and it complies with the stringent industry standards for performance and reliability. Engineers and designers can confidently integrate this Power MOSFET into their systems, knowing it will deliver the performance and durability required for demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.0084 $56.0672
18+ $5.7505 $103.5090
27+ $5.5708 $150.4116
38+ $5.3911 $204.8618
48+ $5.2114 $250.1472
65+ $4.6723 $303.6995
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 905 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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