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STW34NM60ND

Part No STW34NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 29A TO-247
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 80.4nC @ 10V
Max Input Capacitance 2785pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 14.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 031596-STW34NM60ND
Popularity Medium
Supply and Demand Status Limited
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian STW34NM60ND CAD Model

Description

The STW34NM60ND is a high-performance N-channel 600V Power MOSFET manufactured by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of their MDmesh™ ND series, which is renowned for its excellent energy efficiency and thermal performance. The device is designed to meet the rigorous demands of a wide range of power applications, including switch-mode power supplies (SMPS), lighting applications, welding equipment, and high-performance drives.

Key Features

  • Advanced Technology: Utilizes STMicroelectronics' innovative MDmesh™ ND technology, which combines a vertical structure with a new dielectric material to achieve low on-resistance and reduced gate charge.
  • High Voltage Rating: With a voltage rating of 600V, the STW34NM60ND is suitable for high-voltage applications, providing robust performance and reliability.
  • Low On-Resistance: The device features an extremely low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) ensures faster switching performance, which is critical for high-frequency power conversion systems.
  • Improved dv/dt Capability: The MOSFET's high dv/dt rating ensures reliability under fast-switching conditions and reduces electromagnetic interference (EMI).
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring it can withstand high-energy pulses.

Applications

  • Switch-Mode Power Supplies (SMPS)
  • LED Lighting Solutions
  • Welding Equipment
  • High-Performance Drives
  • Power Management Solutions

The STW34NM60ND is available in a TO-247 package, which provides excellent thermal performance and is suitable for through-hole mounting. This package allows for efficient heat dissipation and easy integration into a variety of circuit designs. With its combination of high efficiency, reliability, and performance, the STW34NM60ND is an excellent choice for designers looking to improve the performance and energy efficiency of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.1434 $61.4340
23+ $5.0408 $115.9384
36+ $4.8833 $175.7988
49+ $4.7257 $231.5593
64+ $4.5682 $292.3648
85+ $4.0956 $348.1260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,559 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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