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STW45N60DM6

Part No STW45N60DM6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30A TO247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 600 V 30A (Tc) 210W (Tc) Through Hole TO-247-3
Manufacturer STMicroelectronics
Series MDmesh™ DM6
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247-3
Family Name STW45
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number STW45N60DM6-ND, 497-18276
Quantity per package 30
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898521-STW45N60DM6
Ultra Librarian 3D Model Ultra Librarian STW45N60DM6 CAD Model

Description

STW45N60DM6 - N-channel 600 V, 45 mOhm typ., 35 A MDmesh DM6 Power MOSFET

The STW45N60DM6 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, renowned for its high efficiency and reliability. This advanced power MOSFET is part of STMicroelectronics' MDmesh™ DM6 series, which is designed using the company's innovative super-junction technology that minimizes on-resistance and reduces switching losses.

With a drain-source voltage (V<sub>DS) of 600 V, the STW45N60DM6 is well-suited for high-voltage applications that require efficient power conversion. The device boasts a low on-resistance (R<sub>DS(on)) of just 45 mOhm (typical), ensuring high efficiency in power handling. This feature, combined with a continuous drain current (I<sub>D) of 35 A, makes the MOSFET ideal for a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, solar inverters, and industrial applications.

The STW45N60DM6 is also characterized by its fast switching performance and enhanced dv/dt capability, which contribute to its overall efficiency and robustness in demanding environments. The MOSFET's body diode exhibits very low reverse recovery time (trr), which is crucial for applications where fast diode recovery is essential to minimize losses.

STMicroelectronics has packaged this device in a TO-247 long leads package, which provides excellent thermal performance and is suitable for through-hole mounting. This ensures easy integration into a variety of circuit designs while maintaining the ability to handle high thermal and electrical loads.

Key features of the STW45N60DM6 include:

  • V<sub>DS: 600 V
  • R<sub>DS(on): 45 mOhm (typ.)
  • I<sub>D: 35 A
  • Low gate charge (Q<sub>g)
  • Low input capacitance (C<sub>iss)
  • Fast recovery diode
  • 100% avalanche tested
  • Zener-protected

Overall, the STW45N60DM6 is a robust and efficient solution for power management challenges, offering designers a high-performance component that can significantly enhance the performance and reliability of their systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.9502 $53.5518
21+ $4.8822 $102.5262
32+ $4.7296 $151.3472
44+ $4.5771 $201.3924
57+ $4.4245 $252.1965
76+ $3.9668 $301.4768
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,778 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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