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STW56N65DM2

Part No STW56N65DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Fast-recovery body diode
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh DM2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 88nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4100pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 360W (Tc)
Rds On (Maximum) @ Id, Vgs 65 mOhm @ 24A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 1262378-STW56N65DM2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STW56N65DM2
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STW56N65DM2 CAD Model

Description

STW56N65DM2 - High Performance Power MOSFET by STMicroelectronics

The STW56N65DM2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This device is part of STMicroelectronics' MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and high power density. The STW56N65DM2 is a perfect choice for a wide range of applications, including switched-mode power supplies (SMPS), lighting, welding, solar inverters, and other high-performance power conversion systems.

Constructed with advanced MDmesh DM2 technology, the STW56N65DM2 boasts a very low on-resistance (R<sub>DS(on)) of only 0.036 Ohm, minimizing conduction losses and enhancing overall system efficiency. This technology also allows for high dv/dt capability and excellent switching performance, which is critical for reducing switching losses in power electronic circuits.

Featuring a breakdown voltage of 650V, this power MOSFET can handle high voltage applications with ease. Its robust design ensures reliability and longevity, even under harsh operating conditions. The STW56N65DM2 can support a continuous drain current (I<sub>D) of up to 56A, making it capable of driving high current loads without performance degradation.

The device is packaged in a TO-247 long leads package, which provides excellent thermal performance and simplifies the heat dissipation process. This package is widely preferred for high power applications due to its ability to manage higher power levels and its mechanical ruggedness.

Key features of the STW56N65DM2 include:

  • 650V drain-source breakdown voltage (V<sub>BRDSS)
  • Ultra-low on-resistance (R<sub>DS(on)) of 0.036 Ohm
  • 56A continuous drain current (I<sub>D)
  • High dv/dt capability for fast switching applications
  • 100% avalanche tested for guaranteed reliability
  • TO-247 long leads package for superior thermal management

Engineers and designers can rely on the STW56N65DM2 for its superior performance and STMicroelectronics' commitment to quality. Whether you're developing energy-efficient power supplies or robust industrial systems, this power MOSFET is engineered to meet the most demanding power management challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.6557 $70.9671
6+ $19.4099 $116.4594
8+ $18.8033 $150.4264
11+ $18.1967 $200.1637
15+ $17.5902 $263.8530
20+ $15.7705 $315.4100
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Availability: 9,600 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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