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STW88N65M5-4

Part No STW88N65M5-4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 84A TO247-4L
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features N-Channel 650 V 84A (Tc) 450W (Tc) Through Hole TO-247-4
Manufacturer STMicroelectronics
Series MDmesh™ M5
Package Tube
Operating Temperature Range 150°C (TJ)
Mounting Through Hole
Package TO-247-4
Case / Package TO-247-4
Family Name STW88
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -497-16334-5, 497-16334-5
Quantity per package 30
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935699-STW88N65M5-4
Ultra Librarian 3D Model Ultra Librarian STW88N65M5-4 CAD Model

Description

STW88N65M5-4 - High-Efficiency Power MOSFET by STMicroelectronics

The STW88N65M5-4 is a state-of-the-art power MOSFET from STMicroelectronics, designed to deliver high efficiency and reliability for a wide range of applications. This device is part of STMicroelectronics' MDmesh™ M5 series, which features the company's innovative super-junction technology that minimizes on-resistance and reduces switching losses.

With a maximum continuous drain current of 88A and a drain-source voltage of 650V, the STW88N65M5-4 is capable of handling high power densities and is suitable for high-performance switching applications. Its threshold voltage is optimized for minimal conduction losses, making it an excellent choice for high-efficiency power supplies, solar inverters, welding equipment, and industrial applications.

Key Features:

  • Low On-Resistance: The STW88N65M5-4 boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency.
  • High Current Capability: With an 88A maximum continuous drain current, this MOSFET can handle significant power levels, making it ideal for demanding applications.
  • High Voltage Tolerance: The device is rated for a drain-source voltage of 650V, providing a wide margin for high voltage operations and ensuring reliability under stress.
  • Fast Switching Performance: The fast switching characteristics of the STW88N65M5-4 reduce energy losses during power conversion, contributing to the efficiency of the entire system.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) helps to minimize driver losses and allows for the use of smaller and more efficient drivers.
  • Enhanced Body Diode: The MOSFET features a robust and fast body diode, which is crucial for high-speed switching and reverse recovery operations.

The STW88N65M5-4 also incorporates advanced protection features, such as improved dv/dt capability and 100% avalanche tested ruggedness, ensuring durability and stable performance even in the most challenging conditions. Its package is designed for optimal thermal performance, allowing for better heat dissipation and extended lifespan.

Whether you are designing a new power management system or upgrading an existing one, the STW88N65M5-4 from STMicroelectronics provides the efficiency, reliability, and performance needed to meet the demands of modern high-power electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $27.6453 $55.2906
5+ $22.6833 $113.4165
7+ $21.9745 $153.8215
10+ $21.2656 $212.6560
13+ $20.5568 $267.2384
17+ $18.4302 $313.3134
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,770 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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