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STWA65N65DM2AG

Part No STWA65N65DM2AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 60A TO247 / N-Channel 650 V 60A (Tc) 446W (Tc) Through Hole TO-247 Long Leads
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 100 V
FET Feature -
Power Dissipation (Max) 446W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 Long Leads
Package / Case TO-247-3
Base Product Number STWA65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355873-STWA65N65DM2AG
Ultra Librarian 3D Model Ultra Librarian STWA65N65DM2AG CAD Model

Description

STMicroelectronics STWA65N65DM2AG – High Performance Power MOSFET

The STWA65N65DM2AG is a cutting-edge power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This device is designed with the latest MDmesh™ DM2 technology, which ensures high efficiency and reliability in a wide range of power conversion applications. It is particularly well-suited for high-performance power supplies, inverters, and motor control systems.

Key Features

  • Advanced MDmesh™ DM2 Technology: The MOSFET utilizes STMicroelectronics' second-generation super-junction technology, which provides reduced on-resistance and lower switching losses.
  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of 650V, the STWA65N65DM2AG is capable of handling high voltage applications, making it versatile for various industrial uses.
  • Low Gate Charge (Q<sub>g): The device features a low gate charge, which results in faster switching performance and reduced power dissipation during operation.
  • High Current Capability: It has a continuous drain current (I<sub>D) rating of 59A at 25°C, providing robust current handling capacity for demanding applications.
  • Improved R<sub>DS(on): The low on-state resistance minimizes conduction losses and enhances overall efficiency.
  • 100% Avalanche Tested: This guarantees robustness and reliability in harsh environments where the device might be subject to high-energy pulses.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • High-Efficiency DC-AC Inverters
  • Power Factor Correction (PFC) circuits
  • LED Lighting
  • Welding Equipment
  • Motor Control Systems

The STWA65N65DM2AG is housed in a highly efficient and thermally enhanced H2PAK-6L package, which offers improved heat dissipation and a compact footprint for space-constrained applications. Its robust design and high-quality construction make it an excellent choice for designers looking to improve system performance while maintaining energy efficiency and reliability.

With its combination of advanced technology, high voltage capability, and exceptional performance, the STWA65N65DM2AG from STMicroelectronics represents a top-tier solution for power management challenges in a broad spectrum of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $12.8365 $51.3460
10+ $10.5326 $105.3260
15+ $10.2034 $153.0510
21+ $9.8743 $207.3603
27+ $9.5451 $257.7177
36+ $8.5577 $308.0772
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 86 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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