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STWA70N65DM6

Part No STWA70N65DM6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 100 V
Power Dissipation (Max) 450W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 Long Leads
Package / Case TO-247-3
Base Product Number STWA70
Other Names 497-STWA70N65DM6,-1138-STWA70N65DM6
Standard Package 600
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278107-STWA70N65DM6
Ultra Librarian 3D Model Ultra Librarian STWA70N65DM6 CAD Model

Description

STWA70N65DM6 - High Performance Power MOSFET by STMicroelectronics

The STWA70N65DM6 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This particular MOSFET is part of STMicroelectronics' MDmesh™ DM6 series, which is renowned for its high energy efficiency and excellent performance in a wide range of power applications.

Key Features

  • Advanced MDmesh™ DM6 Technology: The STWA70N65DM6 incorporates the latest advancements in super-junction technology, enabling very low on-resistance and gate charge. This results in reduced conduction and switching losses, making it an ideal choice for energy-sensitive applications.
  • High Voltage Capability: With a breakdown voltage of 650V, this MOSFET is well-suited for high voltage applications, offering a comfortable margin for design flexibility and reliability in operation.
  • Low Gate Charge (Qg): The device is designed with a focus on minimizing gate charge, which leads to faster switching speeds and reduced power dissipation during the switching process.
  • Improved RDS(on) Area: The STWA70N65DM6 boasts an enhanced RDS(on) per area, which provides improved current handling capability while maintaining a compact form factor.
  • High dv/dt Capability: This MOSFET can sustain a high voltage change rate, making it robust against rapid voltage transients and suitable for demanding environments.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring its ability to withstand tough conditions without performance degradation.

Applications

The STWA70N65DM6 is versatile and can be used in a variety of applications, including:

  • Switched Mode Power Supplies (SMPS)
  • LED Lighting Applications
  • High Efficiency DC/DC Converters
  • Solar Inverters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)

With its combination of high efficiency, robustness, and reliability, the STWA70N65DM6 is an excellent choice for designers looking to optimize their power systems. Whether you're designing for industrial, consumer, or automotive applications, this MOSFET from STMicroelectronics offers a high-performance solution that can help you achieve your design goals.

For detailed specifications and application support, visit the STMicroelectronics website or contact their technical support team for assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $34.5192 $69.0384
4+ $28.3234 $113.2936
6+ $27.4383 $164.6298
8+ $26.5532 $212.4256
10+ $25.6681 $256.6810
14+ $23.0128 $322.1792
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,160 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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