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STY100NM60N

Part No STY100NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 98A MAX247  /  N-Channel 600 V 98A (Tc) 625W (Tc) Through Hole MAX247™
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ II
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 49A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 330 nC @ 10 V
Vgs (Max) 25V
Input Capacitance (Ciss) (Max) @ Vds 9600 pF @ 50 V
Power Dissipation (Max) 625W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package MAX247™
Package / Case TO-247-3
Base Product Number STY100
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-13289-5,-497-13289-5
Standard Package 30
Win Source Part Number 1020374-STY100NM60N
Ultra Librarian 3D Model Ultra Librarian STY100NM60N CAD Model

Description

The STY100NM60N is a cutting-edge N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor technology. This high-performance transistor is designed to meet the increasing demands of modern electronic applications, offering an optimal balance of power efficiency and reliability. Its advanced design is tailored for applications that require fast switching, high current handling, and robust thermal performance.

Key Features

  • High Voltage Capability: With a drain-source voltage of 600V, the STY100NM60N is suitable for high voltage applications, providing a wide safety margin for electronic circuits.
  • Low On-Resistance: The device features an ultra-low on-resistance of 0.036Ω, minimizing conduction losses and improving overall efficiency.
  • High Current Rating: It can handle continuous current up to 80A, making it an excellent choice for power-intensive tasks.
  • Advanced Technology: Utilizing ST's second-generation MDmesh™ technology, the MOSFET achieves outstanding on-state resistance with a high packing density.
  • Reduced Gate Charge: The reduced gate charge ensures faster switching speeds, which is crucial for high-frequency applications.
  • Enhanced Ruggedness: Its rugged design allows for reliable operation even under harsh conditions.

Applications

The STY100NM60N is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Control Drives
  • High Performance Converters
  • Power Management Solutions

Reliability and Performance

STMicroelectronics ensures that the STY100NM60N meets the highest quality and performance standards. The device is encapsulated in a TO-247 package, which offers excellent thermal performance and is suitable for high power density applications. The combination of low thermal resistance and high current capability makes this MOSFET an excellent choice for designers looking to enhance system reliability and efficiency.

Whether you're designing power supplies, inverters, or any other high voltage application, the STY100NM60N offers a powerful solution that can help you achieve a more compact, efficient, and reliable design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.2208 $69.6624
6+ $19.0529 $114.3174
9+ $18.4575 $166.1175
12+ $17.8621 $214.3452
15+ $17.2667 $259.0005
20+ $15.4805 $309.6100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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