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STY139N65M5

Part No STY139N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 650 V, 0.014 Ω typ., 130 A, MDmesh™ V Power MOSFET in Max247 package
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh V
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 363nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 15600pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 625W (Tc)
Rds On (Maximum) @ Id, Vgs 17 mOhm @ 65A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package MAX247
Package TO-247-3
Win Source Part Number 1262421-STY139N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STY139N65M5 CAD Model

Description

The STY139N65M5 is a state-of-the-art power MOSFET transistor designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of the MDmesh™ M5 series, which features ST's proprietary super-junction technology that enables outstanding on-resistance and switching performance. The STY139N65M5 is particularly suitable for high-efficiency applications that require a combination of low power loss and fast switching.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650V, the STY139N65M5 is well-suited for applications requiring high voltage operation.
  • Low On-Resistance: The device boasts a very low on-resistance (R<sub>DS(on)), which is typically around 0.032 ohms. This low on-resistance helps to minimize conduction losses and improve overall system efficiency.
  • Fast Switching Speed: Fast switching characteristics make the STY139N65M5 ideal for high-frequency circuits, reducing switching losses and enabling more efficient power conversion.
  • Reduced Gate Charge: The MOSFET has a low gate charge (Q<sub>g), which reduces the power required to turn the transistor on and off, thus saving energy and reducing heat dissipation.
  • Enhanced Thermal Performance: The device is designed with an optimal package for improved thermal resistance, ensuring reliability and longevity even under high temperature operating conditions.

Applications

The STY139N65M5 is versatile and can be used in a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • Welding Equipment
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • High-Performance Drives

Quality and Reliability

STMicroelectronics ensures that the STY139N65M5, like all its products, meets the highest quality and reliability standards. The device is subjected to rigorous testing and validation processes to guarantee performance in even the most demanding situations. Customers can rely on the STY139N65M5 for efficient and reliable operation in their power management designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $64.1507 $64.1507
2+ $60.0119 $120.0238
3+ $57.9426 $173.8278
5+ $53.8038 $269.0190
6+ $51.7345 $310.4070
7+ $49.6650 $347.6550
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Availability: 1,200 pieces
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