The VNB20N07TR-E is a cutting-edge automotive-grade Power MOSFET manufactured by STMicroelectronics, a leader in the semiconductor industry. This robust component is designed to meet the demanding requirements of modern automotive applications, ensuring high reliability and performance.
Key Features
- High Current Capability: With a continuous drain current of 20 A, the VNB20N07TR-E is capable of handling significant power levels, making it ideal for high-power applications.
- Low On-Resistance: A low RDS(on) value ensures that power losses are minimized during operation, enhancing overall efficiency.
- 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, guaranteeing robustness and reliability under harsh conditions.
- High Temperature Performance: The VNB20N07TR-E is designed to operate effectively at elevated temperatures, withstanding the thermal challenges of automotive environments.
Applications
The VNB20N07TR-E is versatile and can be used in a variety of automotive applications, including:
- Automotive Load Switching
- Motor Drive Controllers
- Power Management Systems
Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
70 V |
| Continuous Drain Current (ID) |
20 A |
| Power Dissipation (PD) |
80 W |
| RDS(on) |
0.07 Ω |
| Operating Temperature Range |
-55°C to 175°C |
Quality and Reliability
The VNB20N07TR-E is manufactured to meet the stringent quality standards of the automotive industry. It is qualified according to AEC-Q101 standards, ensuring reliability for automotive applications. Furthermore, the device is provided in a TO-220 package, widely recognized for its mechanical robustness and thermal performance.
For engineers and designers looking for a reliable power MOSFET with high current capability and efficient performance, the VNB20N07TR-E from STMicroelectronics is an excellent choice that stands up to the rigorous demands of automotive electronics.