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TSM060N03ECP

Part No TSM060N03ECP
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 30V, 70A, SINGLE N-CHANNEL POWER / N-Channel 30 V 70A (Tc) 54W (Tc) Surface Mount TO-252, (D-Pak)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.1 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1210 pF @ 25 V
Power Dissipation (Max) 54W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab) , SC-63
Base Product Number TSM060
Standard Package 5,000
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1339097-TSM060N03ECP
Ultra Librarian 3D Model Ultra Librarian TSM060N03ECP CAD Model

Description

The TSM060N03ECP is an N-Channel MOSFET transistor from Taiwan Semiconductor Corporation.

  • Type: MOSFET (Metal Oxide)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: surface mount
  • Packaging: tape and reel
  • Standard Package: 5000
  • Vdss: 30V
  • Power Dissipation: 54W (Tc)
  • Vgs (Max): ±20V
  • Operating Temperature: 150°C (TJ)
  • Drive Voltage: 4.5V, 10V
  • Id @ 25°C: 70A (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • Qg (Max) @ Vgs: 11.1 nC @ 4.5V
  • Ciss (Max) @ Vds: 1210pF @ 25V
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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Availability: 1,031 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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