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Same model may have multiple batches, images only for reference.
TSM100N06CZ C0G Real Image
Same model may have multiple batches, images only for reference.

TSM100N06CZ C0G

Part No TSM100N06CZ C0G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, TRENC
Datasheet
TSM100N06CZ C0G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 4382pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 6.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1114684-TSM100N06CZ C0G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TSM100N06CZ C0G CAD Model

Description

The TSM100N06CZ C0G is a MOSFET transistor manufactured by Taiwan Semiconductor.

  • Maximum Power Dissipation: 167W @ Tc
  • Mounting: Through Hole
  • Package: TO-220-3
  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 92nC @ 10V
  • Maximum Input Capacitance: 4382pF @ 30V
  • Maximum Rds on: 6.7 mOhm @ 30A, 10V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8025 $63.0875
80+ $1.4790 $118.3200
125+ $1.4328 $179.1000
170+ $1.3866 $235.7220
220+ $1.3404 $294.8880
290+ $1.2017 $348.4930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,800 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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