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Same model may have multiple batches, images only for reference.
TSM1N45CW RPG
Same model may have multiple batches, images only for reference.

TSM1N45CW RPG

Part No TSM1N45CW RPG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, PLANA / Trans MOSFET N-CH 450V 0.5A 4-Pin(3+Tab) SOT-223 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer TSC America Inc.
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 450V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.25V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 6.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 235pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 2W (Tc)
Rds On (Maximum) @ Id, Vgs 4.25 Ohm @ 250mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package SOT-223
Package TO-261-4, TO-261AA
Win Source Part Number 798502-TSM1N45CW RPG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Family Name TSM1N45CW
ECCN EAR99
Country of Origin China, Taiwan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian TSM1N45CW RPG CAD Model

Description

The TSM1N45CW MOSFET is a high-performance N-channel transistor that is designed for use in discrete semiconductor products.

  • Current Continuous Drain @ 25°C: 500mA
  • Maximum Power Dissipation: 2W
  • Drain-Source Voltage: 450V
  • Gate-Source Threshold Voltage: 4.25V @ 250μA
  • Gate Charge @ 10V: 6.5nC
  • Input Capacitance @ 25V: 235pF
  • Package: TO-261-4 and TO-261AA
  • Mounting: Surface Mountable
  • Estimated EOL Date: Obsolete or end of life

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