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TSM1NB60CP R0G

Part No TSM1NB60CP R0G
Manufacturer Taiwan Semiconductor
Catalog OEM Parts (T - Z)
Description TSM1NB60CP R0G
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Win Source Part Number 985773-TSM1NB60CP R0G
Categories OEM Parts(T-Z)
Manufacturer Taiwan Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TSM1NB60CP R0G CAD Model

Description

The TSM1NB60CP R0G is a 600V N-channel MOSFET manufactured by Taiwan Semiconductor. It is designed for high-voltage, high-speed switching applications such as power supplies, motor control, and lighting ballasts. The 'TSM' likely stands for Taiwan Semiconductor MOSFET, '1N' indicates a current rating, 'B60' refers to the voltage rating of 600V, 'CP' specifies a particular package type or performance characteristic, and 'R0G' indicates that it is RoHS compliant and may have other specific features.

Applications:

  • Power Supplies: Used in switching power supplies for various electronic devices.
  • Motor Control: Employed in motor control circuits for appliances and industrial equipment.
  • Lighting Ballasts: Used in electronic ballasts for fluorescent and LED lighting systems.
  • High-Voltage Switching: Applied in general high-voltage switching applications.
  • DC-DC Converters: Used in high-voltage DC-DC converters.

Features:

  • N-Channel MOSFET: Provides efficient and fast switching capabilities.
  • 600V Voltage Rating: Suitable for high-voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • High Switching Speed: Enables fast switching operation for reduced switching losses.
  • Avalanche Rated: Can withstand avalanche breakdown without damage.
  • RoHS Compliant: Meets environmental standards for hazardous substance restriction.

Benefits:

  • High Efficiency: Minimizes power losses due to its low on-resistance.
  • Reliable Operation: Provides stable and reliable performance in high-voltage applications.
  • Fast Switching: Reduces switching losses for improved efficiency.
  • Robust Design: Can withstand transient voltage spikes and avalanche conditions.
  • Easy to Use: Simple gate drive requirements for easy implementation.

Additional Details:

The TSM1NB60CP R0G MOSFET is characterized by its voltage rating (600V), on-resistance (RDS(on)), gate charge (Qg), and switching times. The low RDS(on) minimizes conduction losses, while the low gate charge and fast switching times reduce switching losses. The avalanche rating indicates the device's ability to withstand transient voltage spikes. It is typically packaged in a through-hole or surface-mount package. This MOSFET is a reliable choice for applications requiring efficient and fast switching at high voltages. Its robust design and protection features make it suitable for demanding environments and applications. The datasheet provides detailed specifications on its electrical characteristics, thermal performance, and safe operating area. It's a common component in many power electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
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Availability: 4,895 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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