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Same model may have multiple batches, images only for reference.
TSM1NB60CW Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM1NB60CW

Part No TSM1NB60CW
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V, 1A, SINGLE N-CHANNEL POWER
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 138 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.1W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Base Product Number TSM1
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380160-TSM1NB60CW
Ultra Librarian 3D Model Ultra Librarian TSM1NB60CW CAD Model

Description

The 1380160-TSM1NB60CW is an N-channel MOSFET transistor from Taiwan Semiconductor Corporation.

  • Product Category: Discrete Semiconductor Products
  • Function: FETs, MOSFETs - Single FETs, MOSFETs
  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 1A @ 25°C
  • Rds On: 10Ohm @ 500mA and 10V
  • Gate Threshold Voltage (Vgs(th)): 4.5V @ 250µA
  • Gate Charge (Qg): 6.1nC @ 10V
  • Maximum Power Dissipation: 2.1W
  • Mounting Type: Surface Mount
  • Package: TO-261-4, TO-261AA
  • Lifecycle Status: Active
  • REACH Status: Unaffected

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