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BC817-25-7

Part No BC817-25-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.5A SOT23-3 / Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 310 mW Surface Mount SOT-23-3
Datasheet
Sample
Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V
Power - Max 310 mW
Frequency - Transition 100MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Base Product Number BC817
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 3,000 pcs
Win Source Part Number 1381557-BC817-25-7
Ultra Librarian 3D Model Ultra Librarian BC817-25-7 CAD Model

Description

The BC817-25-7 is a high-quality NPN bipolar junction transistor (BJT) from Diodes Incorporated, a leading manufacturer in the semiconductor industry. This transistor is designed for general-purpose switching and amplification applications, making it a versatile component suitable for a wide range of electronic circuits.

Key Features:

  • Transistor Type: NPN - This indicates that the transistor is designed for the flow of electrons as the majority charge carriers, making it suitable for negative ground configurations.
  • Current - Collector (Ic) (Max): 500mA - The BC817-25-7 can handle a collector current up to 500 milliamperes, which is sufficient for many low to medium power applications.
  • Voltage - Collector Emitter Breakdown (Max): 45V - With a collector-emitter breakdown voltage of 45 volts, it can be used in circuits that operate at moderate voltage levels.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V - The transistor has a minimum DC current gain of 160 at 100mA and 1V, indicating its efficiency in amplifying the input signal.
  • Power - Max: 500mW - It can dissipate power up to 500 milliwatts, suitable for a variety of general-purpose applications without the need for excessive heat sinking.
  • Frequency - Transition: 100MHz - This transistor has a transition frequency of 100MHz, allowing it to be used in applications that require fast switching.
  • Operating Temperature: -55°C to +150°C - The device can operate over a wide temperature range, ensuring reliability in various environmental conditions.
  • Mounting Type: Surface Mount - The BC817-25-7 comes in a surface mount package, making it ideal for modern printed circuit board designs.
  • Package / Case: SOT-23-3 - This small and compact package allows for efficient use of PCB space.

The BC817-25-7 transistor from Diodes Incorporated is an excellent choice for designers and engineers looking for a reliable and efficient NPN BJT for their electronic projects. Its robust design and electrical characteristics make it a go-to component for a variety of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,825+ $0.0274 $50.0050
4,445+ $0.0225 $100.0125
6,885+ $0.0218 $150.0930
9,480+ $0.0211 $200.0280
12,255+ $0.0204 $250.0020
16,395+ $0.0183 $300.0285
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,896 pieces
MOQ: 1825 pcs
Order Increment : 1 pcs
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