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Same model may have multiple batches, images only for reference.
TSM2305CX RFG Real Image
Same model may have multiple batches, images only for reference.

TSM2305CX RFG

Part No TSM2305CX RFG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, P-CHANNEL, -20V,
Datasheet
TSM2305CX RFG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 990pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 3.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1114725-TSM2305CX RFG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM2305CX RFG CAD Model

Description

The TSM2305CX RFG is a MOSFET from Taiwan Semiconductor.

  • Polarity: P-Channel
  • Mounting Type: SMD (SMT)
  • Supply Voltage: 2V to 5.5V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 1.25W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.2A (Ta)
  • Maximum Rds On @ Id,Vgs: 55 mOhm @ 3.2A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge: 10nC @ 10V
  • Supply and Demand Status: Balanced

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