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TSM2NB60CH

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	TSM2NB60CH
Manufacturer	Taiwan Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	600V, 2A, SINGLE N-CHANNEL POWER
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.4 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	249 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	44W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251 (IPAK)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number	TSM2
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1380163-TSM2NB60CH
Ultra Librarian 3D Model	Ultra Librarian TSM2NB60CH CAD Model

Alternative Products

Description

The TSM2NB60CH is a N-Channel MOSFET transistor from Taiwan Semiconductor Corporation.

Series: TSM2
Drain to Source Voltage (Vdss): 600 V
Continuous Drain Current (Id): 2A @ 25°C
On-Resistance (Rds On): 4.4 Ohm @ 1A, 10V
Gate Threshold Voltage (Vgs(th)): 4.5V @ 250μA
Gate Charge (Qg): 9.4 nC @ 10V
Power Dissipation: 44W
Package: TO-251-3 Short Leads, IPak, TO-251AA
Mounting: Through-Hole

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