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TSM3N80CI C0G

Part No TSM3N80CI C0G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, PLANA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 696pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 4.2 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package ITO-220
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1114741-TSM3N80CI C0G
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian TSM3N80CI C0G CAD Model

Description

The TSM3N80CI C0G is a discrete semiconductor product manufactured by Taiwan Semiconductor.

  • Supply and Demand Status: Balanced
  • Use: MOSFET
  • Polarity: N-Channel
  • Product Status: Active
  • Maximum Power Dissipation: 94W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Mounting: Through Hole
  • Dimension: TO-220-3 Full Pack, Isolated Tab
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 3A (Tc)
  • Maximum Gate-Source Voltage: ±30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3543 $58.8575
60+ $1.9318 $115.9080
93+ $1.8713 $174.0309
128+ $1.8110 $231.8080
165+ $1.7507 $288.8655
221+ $1.5696 $346.8816
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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