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TSM4435BCS RLG Real Image1 TSM4435BCS RLG Real Image2
Same model may have multiple batches, images only for reference.
TSM4435BCS RLG Real Image1 TSM4435BCS RLG Real Image2
TSM4435BCS RLG Real Image1 TSM4435BCS RLG Real Image2
Same model may have multiple batches, images only for reference.

TSM4435BCS RLG

Part No TSM4435BCS RLG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, P-CHANNEL, -30V,
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 3.2nC @ 10V
Max Input Capacitance 1900pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 21 mOhm @ 9.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1097003-TSM4435BCS RLG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian TSM4435BCS RLG CAD Model

Description

The TSM4435BCS RLG from Taiwan Semiconductor is a P-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 9.1A @ 25°C.

  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Mounting Type: Surface mountable
  • Package: 8-SOP
  • Category: Discrete semiconductor product

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