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TSM480P06CH

Part No TSM480P06CH
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description -60V, -20A, SINGLE P-CHANNEL POW
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 48mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 30 V
FET Feature -
Power Dissipation (Max) -
Temperature Range - Operating -50°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251S (I-PAK SL)
Package / Case TO-251-3 Stub Leads, IPak
Base Product Number TSM480
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380167-TSM480P06CH
Ultra Librarian 3D Model Ultra Librarian TSM480P06CH CAD Model

Description

The TSM480P06CH is a P-channel MOSFET transistor from Taiwan Semiconductor Corporation.

  • Manufacturer: Taiwan Semiconductor Corporation
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Voltage - Drain to Source (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250μA
  • Gate Charge (Qg) @ Vgs: 22.4nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 1250pF @ 30V
  • Mounting Type: Through Hole
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Package / Case: TO-251-3 Stub Leads, IPak
  • REACH: Yes
  • ECCN: EAR99

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