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Same model may have multiple batches, images only for reference.
TSM4N80CI C0G Real Image
Same model may have multiple batches, images only for reference.

TSM4N80CI C0G

Part No TSM4N80CI C0G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 4A ITO220AB / N-Channel 800 V 4A (Tc) 38.7W (Tc) Through Hole ITO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Taiwan Semiconductor Corporation
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 955 pF @ 25 V
Power Dissipation (Max) 38.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab
Base Product Number TSM4N80
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names TSM4N80CI C0G-ND,TSM4N80CIC0G
Standard Package 2,000
Win Source Part Number 1101481-TSM4N80CI C0G
Ultra Librarian 3D Model Ultra Librarian TSM4N80CI C0G CAD Model

Description

The TSM4N80CI C0G is an N-channel MOSFET transistor manufactured by Taiwan Semiconductor Corporation.

  • Application: FETs, MOSFETs - Single
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Maximum Vgs: ±30V
  • Drain to Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 4A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
  • Power Dissipation: 38.7W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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