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Same model may have multiple batches, images only for reference.
TSM5NC50CF C0G Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM5NC50CF C0G

Part No TSM5NC50CF C0G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A ITO220S
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.38Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 586 pF @ 50 V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220S
Package / Case TO-220-3 Full Pack
Base Product Number TSM5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380170-TSM5NC50CF C0G
Ultra Librarian 3D Model Ultra Librarian TSM5NC50CF C0G CAD Model

Description

The TSM5NC50CF C0G is a N-Channel MOSFET transistor from Taiwan Semiconductor Corporation.

  • Series: TSM5
  • Package: TO-220-3 Full Pack
  • Drain to Source Voltage (Vdss): 500 V
  • Continuous Drain Current (Id): 5A @ 25°C
  • On-Resistance (Rds On): 1.38 Ohm @ 1.7A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4.5V @ 250μA
  • Gate Charge (Qg): 15 nC @ 10V
  • Input Capacitance (Ciss): 586 pF @ 50V
  • Maximum Power Dissipation: 40W
  • Mounting Type: Through hole

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