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Same model may have multiple batches, images only for reference.
TSM60NB1R4CP
Same model may have multiple batches, images only for reference.

TSM60NB1R4CP

Part No TSM60NB1R4CP
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V, 3A, SINGLE N-CHANNEL POWER / N-Channel 600 V 3A (Tc) 28.4W (Tc) Surface Mount TO-252, (D-Pak)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 257.3 pF @ 100 V
FET Feature -
Power Dissipation (Max) 28.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TSM60
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000 pcs
Win Source Part Number 1383755-TSM60NB1R4CP
Ultra Librarian 3D Model Ultra Librarian TSM60NB1R4CP CAD Model

Description

The TSM60NB1R4CP is a N-Channel MOSFET designed for high-power applications, manufactured by Taiwan Semiconductor.

  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 3A @ 25°C
  • On-Resistance (Rds On): 1.4Ohm @ 900mA and 10V
  • Gate Charge (Qg): 7.12nC @ 10V
  • Package: TO-252-3, DPak
  • Mounting Type: Surface Mount
  • Power Dissipation: 28.4W

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
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