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TSM6866SDCA RVG Real Image1 TSM6866SDCA RVG Real Image2
Same model may have multiple batches, images only for reference.
TSM6866SDCA RVG Real Image1 TSM6866SDCA RVG Real Image2
TSM6866SDCA RVG Real Image1 TSM6866SDCA RVG Real Image2
Same model may have multiple batches, images only for reference.

TSM6866SDCA RVG

Part No TSM6866SDCA RVG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, DUAL, N-CHANNEL, TRENCH,
Datasheet
TSM6866SDCA RVG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 6A, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA
Max Gate Charge 5nC @ 4.5V
Maximum Power Dissipation 1.6W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1114751-TSM6866SDCA RVG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM6866SDCA RVG CAD Model

Description

The TSM6866SDCA RVG is a 2 N-Channel (Dual) standard FET designed and manufactured by Taiwan Semiconductor.

  • Category: Discrete semiconductor product
  • Case/Package: 8-TSSOP
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Power Dissipation: 1.6W
  • Continuous Drain Current @ 25°C: 6A (Ta)
  • Gate-Source Threshold Voltage @ 250μA: 600mV
  • Maximum Rds on @ 6A, 4.5V: 30 mOhm
  • Popularity: Medium
  • Supply and Demand: Balanced

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