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TSM70NB1R4CP

Part No TSM70NB1R4CP
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 700V, 3A, SINGLE N-CHANNEL POWER / N-Channel 700 V 3A (Tc) 28W (Tc) Surface Mount TO-252, (D-Pak)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 317 pF @ 100 V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TSM70
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000 pcs
Win Source Part Number 1383758-TSM70NB1R4CP
Ultra Librarian 3D Model Ultra Librarian TSM70NB1R4CP CAD Model

Description

The TSM70NB1R4CP is an N-channel MOSFET transistor designed for high-voltage applications, manufactured by Taiwan Semiconductor.

  • Drain to Source Voltage: 700V
  • Continuous Drain Current: 3A
  • On-Resistance: 1.4Ohm
  • Gate Threshold Voltage: 4V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Type: Surface Mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2305 $66.9150
65+ $1.8302 $118.9630
100+ $1.7731 $177.3100
135+ $1.7159 $231.6465
175+ $1.6587 $290.2725
235+ $1.4871 $349.4685
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,011 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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