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Same model may have multiple batches, images only for reference.
TSM80N1R2CH
Same model may have multiple batches, images only for reference.

TSM80N1R2CH

Part No TSM80N1R2CH
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 800V, 5.5A, SINGLE N-CHANNEL POW / N-Channel 800 V 5.5A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 100 V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number TSM80
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 15,000 pcs
Win Source Part Number 1383759-TSM80N1R2CH
Ultra Librarian 3D Model Ultra Librarian TSM80N1R2CH CAD Model

Description

The TSM80N1R2CH is an N-channel MOSFET transistor designed for high-voltage applications.

  • Manufacturer: Taiwan Semiconductor
  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 5.5A
  • On-Resistance: 1.2Ohm
  • Gate Threshold Voltage: 4V
  • Package: Through-hole TO-251-3 Short Leads, IPak, TO-251AA
  • Applications: Power supplies, motor control, and high-voltage switching

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32+ $3.6795 $117.7440
49+ $3.5645 $174.6605
67+ $3.4495 $231.1165
87+ $3.3345 $290.1015
116+ $2.9896 $346.7936
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