Product Overview: BQ4010MA-70 from Texas Instruments

The BQ4010MA-70 is a high-performance CMOS static RAM non-volatile memory module from the reputable semiconductor manufacturer Texas Instruments. This advanced memory module combines a 512K x 8 non-volatile SRAM, a power control circuit, and a lithium energy source into a single 28-pin module. The integration of these components provides data retention and an auto-store capability upon power loss without the need for an external battery.

Key Features

• Memory Size: The BQ4010MA-70 offers a substantial memory capacity of 4 megabits, organized as 512K by 8 bits, catering to applications that require ample data storage.
• Power Source: An on-board lithium battery provides reliable backup power, ensuring data retention for a minimum of 10 years in the absence of external power.
• Access Time: Featuring a fast access time of 70 nanoseconds, this memory module allows for quick data retrieval, enhancing overall system performance.
• Automatic Power-Fail Chip De-Select and Write Protection: The integrated power control circuitry automatically switches the memory from active to non-volatile storage upon power failure, while also write-protecting the data.
• Low-Power Operation: The BQ4010MA-70 is designed for efficient power consumption, making it ideal for battery-powered and energy-saving applications.
• Compatibility: It is fully compatible with industry-standard JEDEC-defined BQ4010 pinouts, facilitating easy integration into existing designs.

Applications

The BQ4010MA-70 is suitable for a wide array of applications that require reliable and long-term data storage, even in the event of power loss. These include industrial control systems, utility meters, medical devices, point-of-sale terminals, and other mission-critical systems where data integrity is paramount.

Quality and Reliability

As with all Texas Instruments products, the BQ4010MA-70 is manufactured to the highest quality standards, ensuring both reliability and performance. Customers can trust in the robust design and longevity of this non-volatile memory module for their critical data storage needs.