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CSD16409Q3

Part No CSD16409Q3
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 60A 8-SON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 15A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 5.6nC @ 4.5V
Max Input Capacitance 800pF @ 12.5V
Maximum Gate-Source Voltage +16V, -12V
Power Dissipation (Max) 2.6W (Ta)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-VSON (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 013353-CSD16409Q3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian CSD16409Q3 CAD Model

Description

CSD16409Q3 - Power MOSFET

The CSD16409Q3 is a well-designed power MOSFET that offers superior performance in compact electronic applications. It's best suited for high-efficiency power conversion and management systems.

  • Applications:
    • High-efficiency DC-DC Conversion
    • Telecom Infrastructure
    • Portable Equipment
  • Features and Benefits:
    • Low gate charge for fast switching
    • High-speed performance
    • Small QFN package for design flexibility
  • Additional Details:
    • Maximum Drain-Source Voltage: 30V
    • Maximum Continuous Drain Current: 55A

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Pricing & Ordering

Quantity Unit Price Ext. Price
260+ $0.1932 $50.2320
635+ $0.1586 $100.7110
980+ $0.1536 $150.5280
1,345+ $0.1487 $200.0015
1,740+ $0.1437 $250.0380
2,330+ $0.1288 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 218,711 pieces
MOQ: 260 pcs
Order Increment : 1 pcs
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