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Same model may have multiple batches, images only for reference.
IRF730
Same model may have multiple batches, images only for reference.

IRF730

Part No IRF730
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5.2A 8-SOIC
Datasheet
IRF730 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.2A
Maximum Rds On at Id,Vgs 50 mOhm @ 2.6A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 20nC @ 4.5V
Max Input Capacitance 660pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 284278-IRF730
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF730 CAD Model

Description

The Infineon Technologies IRF730 is a dual N-Channel MOSFET that is designed for use in a variety of applications.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 20nC @ 4.5V
  • Package: 8-SO package
  • Maximum Rds On: 50 mOhm @ 2.6A and 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1189 $50.5325
900+ $0.1114 $100.2600
1,395+ $0.1076 $150.1020
2,000+ $0.1001 $200.2000
2,600+ $0.0963 $250.3800
3,240+ $0.0926 $300.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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