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CSD17312Q5

Part No CSD17312Q5
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A 8SON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 36nC @ 4.5V
Max Input Capacitance 5240pF @ 15V
Maximum Gate-Source Voltage +10V, -8V
Power Dissipation (Max) 3.2W (Ta)
Maximum Rds On at Id,Vgs 1.5 mOhm @ 35A, 8V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-VSON-CLIP (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 080036-CSD17312Q5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CSD17312Q5 CAD Model

Description

Product Overview

The CSD17312Q5 is a high-performance power MOSFET designed by Texas Instruments, offering superior efficiency and reliability in power management applications. With its optimized RDS(on) performance and low capacitance, it serves as an ideal choice for high-frequency applications, providing exceptional switching efficiency.

Key Features and Benefits

  • Optimized RDS(on) for reduced conduction losses
  • Low gate charge for enhanced switching performance
  • Compact QFN package for efficient thermal management
  • High-reliability suitable for industrial applications

Applications

  • DC-DC converters
  • Motor control circuits
  • Switching regulators
  • Solar inverters

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4256 $57.0240
75+ $1.3354 $100.1550
120+ $1.2903 $154.8360
170+ $1.2000 $204.0000
220+ $1.1549 $254.0780
275+ $1.1098 $305.1950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,500 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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