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CSD18535KTT

Part No CSD18535KTT
Manufacturer Texas Instruments
Catalog FETs - Single
Description MOSFET N-CH 60V 200A / 60 V N-Channel NexFET Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Texas Instruments
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 200A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 2mOhm at 100A, 10V
Vgs(th) (Maximum) at Id 2.4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 81nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 6620pF at 30V
Power Dissipation (Maximum) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package DDPAK/TO-263-3
Manufacturer Package TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Manufacturer Pack Quantity 500
MSL Level 2 (1 Year)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 810611-CSD18535KTT
Ultra Librarian 3D Model Ultra Librarian CSD18535KTT CAD Model

Description

Introducing the CSD18535KTT MOSFET from Texas Instruments

The CSD18535KTT is a state-of-the-art N-Channel NexFET™ power MOSFET from Texas Instruments that offers exceptional performance in a compact and efficient package. This product is designed to meet the demands of a wide range of power applications, making it an ideal choice for designers looking to enhance system efficiency, reliability, and power density.

Key Features

  • Ultra-Low On-Resistance: The CSD18535KTT boasts an ultra-low on-resistance (R<sub>DS(on)) of just 3.3 mΩ at V<sub>GS = 10V, which minimizes conduction losses and improves overall efficiency.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of 100A, this MOSFET can handle high-power applications with ease.
  • Advanced Thermal Performance: The device's enhanced thermal characteristics ensure reliable operation even under high current conditions.
  • SON 5mm x 6mm Plastic Package: The compact form factor allows for a smaller footprint on the PCB, providing more space for other components or enabling smaller overall system size.

Power Efficiency and Reliability

The CSD18535KTT is engineered for applications that require high efficiency and power density. Its low gate charge (Q<sub>g) and low input capacitance (C<sub>iss) reduce switching losses, making it particularly suitable for high-frequency switching applications. The robust design ensures that the MOSFET can withstand harsh environments and maintain performance over a wide temperature range.

Applications

With its impressive specifications, the CSD18535KTT is versatile for various applications, including:

  • DC/DC converters
  • Motor drives
  • Power supplies
  • Synchronous rectification
  • Point of Load (POL) modules
  • Battery management systems

Whether you're designing power systems for consumer electronics, automotive, industrial, or renewable energy applications, the CSD18535KTT offers the performance, efficiency, and reliability you need to take your designs to the next level.

For detailed specifications, application notes, and additional resources, visit the Texas Instruments product page for the CSD18535KTT.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.5913 $57.4608
34+ $3.3640 $114.3760
52+ $3.2504 $169.0208
75+ $3.0231 $226.7325
97+ $2.9094 $282.2118
121+ $2.7957 $338.2797
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,707 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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