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CSD19506KTTT

Part No CSD19506KTTT
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description IC MOSFET N-CH 80V TO-220 / Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Series NexFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 80V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 3.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 156nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 12200pF @ 40V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 375W (Tc)
Rds On (Maximum) @ Id, Vgs 2.3 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package DDPAK/TO-263-3
Package TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Win Source Part Number 771883-CSD19506KTTT
Popularity Medium
Supply and Demand Status Balance
Family Name CSD19506KTT
Introduction Date March 21, 2016
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian CSD19506KTTT CAD Model

Description

The Texas Instruments CSD19506KTTT is a state-of-the-art NexFET™ power MOSFET designed to deliver high efficiency and performance for a wide range of applications. This MOSFET features ultra-low on-resistance and low gate charge, making it an ideal component for power management tasks where energy efficiency is a critical factor.

Key Features

  • Low On-Resistance: With a typical R<sub>DS(on) of only 1.8 mΩ, the CSD19506KTTT provides exceptional conductivity, reducing losses and improving overall system efficiency.
  • High Continuous Drain Current: It is capable of supporting a continuous drain current (I<sub>D) of up to 100 A, making it suitable for high-power applications.
  • Fast Switching Speed: The device's low gate charge (Q<sub>g) ensures fast switching, which is vital for reducing switching losses in power conversion systems.
  • Thermal Management: The CSD19506KTTT comes in a TO-220 package, which is known for its excellent thermal characteristics, ensuring reliable operation even under high power and temperature conditions.
  • Voltage Rating: With a drain-to-source voltage (V<sub>DSS) rating of 80 V, this MOSFET can handle a broad range of applications from industrial to automotive.

Applications

The versatility of the CSD19506KTTT allows it to be used in a variety of applications, including:

  • DC/DC Converters
  • Motor Drives
  • Power Supplies
  • Synchronous Rectification
  • Load Switches
  • Battery Management Systems

Quality and Reliability

Texas Instruments is known for its commitment to quality, and the CSD19506KTTT is no exception. It is designed to meet the stringent requirements of the industrial and automotive industries, offering robust performance even in the most demanding conditions.

Conclusion

With its combination of low on-resistance, high current capability, and fast switching performance, the Texas Instruments CSD19506KTTT NexFET™ power MOSFET is a compelling choice for designers who require a high-performance power management solution. Its thermal efficiency and reliability make it suitable for a wide range of high-efficiency applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.3036 $50.4288
20+ $5.1722 $103.4440
30+ $5.0105 $150.3150
42+ $4.8489 $203.6538
54+ $4.6873 $253.1142
72+ $4.2024 $302.5728
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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