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CSD19536KTTT

Part No CSD19536KTTT
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 200A TO263 / Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) TO-263 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Series NexFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 3.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 153nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 12000pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 375W (Tc)
Rds On (Maximum) @ Id, Vgs 2.4 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package DDPAK/TO-263-3
Package TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Win Source Part Number 771889-CSD19536KTTT
Popularity Medium
Supply and Demand Status Limited
Family Name CSD19536KTT
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian CSD19536KTTT CAD Model

Description

    

The Texas Instruments CSD19536KTTT is a state-of-the-art N-Channel NexFET™ power MOSFET designed for high-performance power conversion applications. This device is part of TI's extensive NexFET portfolio, which is known for its high efficiency and power density. The CSD19536KTTT is particularly well-suited for synchronous buck converters, solar inverters, motor drives, and other power supply circuits where efficiency is crucial.

  

Key Features

  
        
  • Low On-Resistance: With a typical RDS(on) of just 3.3 mΩ, the CSD19536KTTT ensures minimal conduction losses and is highly efficient in passing current.
  •     
  • Ultra-Low Qg and Qsw: The device features extremely low gate charge and switch charge, which results in reduced switching losses and improved overall efficiency in switching applications.
  •     
  • High Continuous Drain Current: It supports a high continuous drain current (ID) of 100 A, making it capable of handling high power levels with ease.
  •     
  • High Thermal Performance: The CSD19536KTTT's SON 5mm x 6mm plastic package is designed for excellent thermal performance, ensuring reliability even under high power operation.
  •     
  • RoHS Compliant: This product is compliant with RoHS standards, minimizing the environmental impact by restricting the use of certain hazardous substances.
  •   
  

Applications

  

The CSD19536KTTT is versatile and can be used in various applications, including:

  
        
  • DC/DC Converters
  •     
  • Motor Control
  •     
  • Power Supplies for Servers
  •     
  • Solar Power Inverters
  •     
  • Telecom and Networking Equipment
  •   
  

Quality and Reliability

  

As with all Texas Instruments products, the CSD19536KTTT is manufactured to the highest quality standards. Customers can expect reliable performance and durability from this MOSFET, which has been rigorously tested to ensure it meets TI's stringent requirements for quality and reliability.

  

For detailed specifications, application notes, and design resources, engineers and designers are encouraged to visit the Texas Instruments official website or contact their support team for further assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.2109 $50.5308
29+ $3.4551 $100.1979
45+ $3.3471 $150.6195
62+ $3.2391 $200.8242
80+ $3.1312 $250.4960
107+ $2.8073 $300.3811
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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