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CSD25211W1015

Part No CSD25211W1015
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.2A 6DSBGA
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 11 Weeks
Features P-Channel 20 V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)
Manufacturer Texas Instruments
Series NexFET™
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 6-UFBGA, DSBGA
Case / Package 6-DSBGA (1x1.5)
Family Name CSD25211
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number CSD25211W1015-ND, -296-36578-1-ND, 296-36578-6-NDR, -296-36578-1, 296-36578-1, 296-36578-2-NDR, 296-36578-1-NDR, 296-36578-2, -CSD25211W1015-NDR, 296-36578-6
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 916127-CSD25211W1015
Ultra Librarian 3D Model Ultra Librarian CSD25211W1015 CAD Model

Description

The CSD25211W1015 is a state-of-the-art MOSFET designed and manufactured by Texas Instruments, one of the leading companies in the semiconductor industry. This product is meticulously engineered to meet the demands of modern electronic circuits, providing efficient power management and signal processing capabilities.

Key Features

  • Low On-Resistance: The CSD25211W1015 features an ultra-low on-resistance (R<sub>DS(on)), which results in minimal power loss and improved overall efficiency during operation.
  • Compact Footprint: With its small form factor, this MOSFET is ideal for space-constrained applications, allowing designers to minimize the size of their PCBs without sacrificing performance.
  • High Thermal Performance: Designed to handle high temperatures, the CSD25211W1015 maintains its performance even under thermal stress, ensuring reliability and longevity.
  • Power-Dense Design: This MOSFET is optimized for power-dense applications, providing a high current handling capability in a compact package.
  • Advanced Packaging: The CSD25211W1015 utilizes Texas Instruments' cutting-edge packaging technology, which enhances its electrical and thermal characteristics.

Applications

The versatility of the CSD25211W1015 makes it suitable for a wide range of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Battery management systems
  • Load switches
  • Motor control modules

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DS) 12 V Continuous Drain Current (I<sub>D) 54 A Power Dissipation (P<sub>D) 3.8 W Operating Temperature Range -55°C to +150°C

In conclusion, the CSD25211W1015 from Texas Instruments is a robust and reliable MOSFET, perfect for designers looking to enhance efficiency, reduce footprint, and maintain high-performance standards in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3149 $50.3840
390+ $0.2584 $100.7760
600+ $0.2504 $150.2400
830+ $0.2423 $201.1090
1,070+ $0.2342 $250.5940
1,430+ $0.2100 $300.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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