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2SA1013-O,T6MIBF(J

Part No 2SA1013-O,T6MIBF(J
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 1A 160V TO226-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 1.5V @ 50mA, 500mA
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 60 @ 200mA, 5V
Maximum Power Dissipation 900mW
Frequency - Transition 50MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92L
Win Source Part Number 1010887-2SA1013-O,T6MIBF(J
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1013-O,T6MIBF(J CAD Model

Description

The Toshiba Semiconductor and Storage 2SA1013-O,T6MIBF(J) is a PNP transistor in the discrete semiconductor products category.

  • Packaging: Bulk
  • Mounting Type: Through-hole
  • Frequency-Transition: 50MHz
  • Maximum Current Collector: 1A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
  • Max Vce (sat): 1.5V @ 50mA, 500mA
  • Collector Cut-off Current (Max): 1μA (ICBO)
  • Typical Gain (hFE) (min): 60 @ 200mA, 5V
  • Maximum Power Dissipation: 900mW
  • Popularity: Medium (53 pct.)
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2391 $58.5795
590+ $0.1964 $115.8760
910+ $0.1906 $173.4460
1,260+ $0.1836 $231.3360
1,625+ $0.1779 $289.0875
2,175+ $0.1594 $346.6950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 292,000 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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