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Same model may have multiple batches, images only for reference.
2SA1213-O(TE12L,CF)
Same model may have multiple batches, images only for reference.

2SA1213-O(TE12L,CF)

Part No 2SA1213-O(TE12L,CF)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT PNP 50V 2A 4-Pin(3+Tab) PW-Mini T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 50 V
Collector Emitter Voltage (VCEO) 50 V
Max Collector Current 2 A
Maximum Operating Temperature 150 °C
Max Power Dissipation 1 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 4
Packaging Tape & Reel
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1027650-2SA1213-O(TE12L,CF)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1213-O(TE12L,CF) CAD Model

Description

The Toshiba Semiconductor and Storage 2SA1213-O(TE12L,CF) RF Transistor (BJT) is a low popularity component that is supplied in tape and reel packaging.

  • Pins: 4
  • Type: Surface mount
  • RoHS compliant: Yes
  • Maximum operating temperature: 150 °C
  • Minimum operating temperature: -55 °C
  • Collector base voltage (VCBO): 50 V
  • Collector emitter voltage (VCEO): 50 V
  • Maximum collector current: 2 A
  • Maximum power dissipation: 1 W

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