The 2SA1213-Y(TE12R,F) is a PNP silicon epitaxial transistor from Toshiba Semiconductor and Storage. This transistor is designed for use in audio frequency power amplifier applications, especially in output stages. The (TE12R,F) suffix likely specifies a particular tape and reel packaging configuration along with manufacturing details.

Applications

• Audio power amplifiers: Used as the output transistor in various audio amplifiers.
• Stereo amplifiers: Employed in stereo amplifier systems for home audio.
• Car audio amplifiers: Integrated into car audio systems to amplify audio signals.
• Public address systems: Used in the amplifier stages of PA systems.
• Musical instrument amplifiers: Applied in amplifiers designed for musical instruments such as guitars and keyboards.

Features

• PNP silicon epitaxial transistor: Offers reliable and efficient amplification.
• High collector current capability: Suitable for driving low impedance loads like speakers.
• High power dissipation: Allows for higher output power in amplifier circuits.
• Low saturation voltage: Minimizes power loss and enhances efficiency.
• Excellent frequency response: Provides accurate amplification across the audio frequency range.

Benefits

• High-quality audio reproduction: Delivers clear and powerful sound.
• Robust performance: Capable of handling demanding audio signals.
• Efficient power usage: Reduces heat generation and enhances amplifier efficiency.
• Low distortion: Ensures faithful reproduction of audio signals.
• Reliable operation: Designed for stable and consistent performance.

Additional Details

The 2SA1213-Y(TE12R,F) features a collector-emitter voltage (VCEO) of -80V, a collector current (IC) of -7A, and a collector power dissipation (PC) of 80W. The 'Y' suffix specifies a particular range of current gain (hFE), typically between 100 and 320. It operates over a junction temperature range of -55°C to +150°C. The typical package is TO-220. It's designed for complementary use with an NPN transistor such as the 2SC2911.