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Same model may have multiple batches, images only for reference.
2SA1242-Y(Q) Real Image
Same model may have multiple batches, images only for reference.

2SA1242-Y(Q)

Part No 2SA1242-Y(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 20V 5A PW-MOLD
Datasheet
2SA1242-Y(Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Max Vce (sat) 1V @ 100mA, 4A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 160 @ 500mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 170MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PW-MOLD
Win Source Part Number 197482-2SA1242-Y(Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1242-Y(Q) CAD Model

Description

Features and Benefits

  • High DC current gain for efficient amplification
  • Low collector-emitter saturation voltage improves performance
  • Compact package size ensures space-saving design

Applications and Projects

  • Audio frequency amplifier circuits
  • Signal processing in communication equipment
  • Switching and amplification tasks in industrial electronics

This 2SA1242-Y(Q) transistor is a versatile component ideal for enhancing your electronic design projects. It's engineered to deliver reliable performance with improved thermal stability and noise reduction, making it an excellent choice for professionals seeking dependability in their applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6480 $58.3200
220+ $0.5318 $116.9960
340+ $0.5151 $175.1340
465+ $0.4985 $231.8025
600+ $0.4819 $289.1400
805+ $0.4320 $347.7600
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Availability: 6,210 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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