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2SA1312-GR Real Image 2SA1312-GR Real Image
Same model may have multiple batches, images only for reference.
2SA1312-GR Real Image 2SA1312-GR Real Image
2SA1312-GR Real Image 2SA1312-GR Real Image
Same model may have multiple batches, images only for reference.

2SA1312-GR

Part No 2SA1312-GR
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 153530-2SA1312-GR
Popularity Low
Supply and Demand Status Balance
Family Name 2SA1312GR
Introduction Date January 04, 1997
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SA1312-GR CAD Model

Description

Overview

The 2SA1312-GR is a high-performance PNP bipolar junction transistor (BJT) widely used in electronic circuits for switching and amplification purposes. Its compact and durable design ensures reliability in operation.

Features and Benefits

  • High collector current capability.
  • Low saturation voltage, enhancing efficiency.
  • Temperature-stable performance.

Applications

  • Audio amplifiers
  • Signal processing circuits
  • Switching circuits
  • Voltage regulation projects

The 2SA1312-GR transistor is a versatile component suitable for enhancing the performance of a wide variety of electronic applications, providing both stability and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
590+ $0.0982 $57.9380
1,430+ $0.0809 $115.6870
2,210+ $0.0785 $173.4850
3,080+ $0.0751 $231.3080
3,970+ $0.0728 $289.0160
5,265+ $0.0658 $346.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,200 pieces
MOQ: 590 pcs
Order Increment : 1 pcs
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