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Same model may have multiple batches, images only for reference.
2SA1315-Y Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA1315-Y

Part No 2SA1315-Y
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 2A 80V TO226-3
Datasheet
2SA1315-Y Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 50mA, 1A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 70 @ 500mA, 2V
Maximum Power Dissipation 900mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 153541-2SA1315-Y
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1315-Y CAD Model

Description

2SA1315-Y Transistor

The 2SA1315-Y is a versatile PNP transistor known for its high gain and reliable operation. This component is suited for various consumer electronics, making it a staple in devices such as radios and amplifiers.

  • Applications: Radio Receivers, Power Amplifiers, Signal Processing
  • Features: High Gain, Durable Build, Efficient Power Use
  • Benefits: Versatility Across Applications, High Efficiency, Robust Design

These attributes make the 2SA1315-Y a reliable choice for designers seeking efficiency and performance in electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,800 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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