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2SA1425-Y

Part No 2SA1425-Y
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 800MA 120V SC71
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 100mA, 5V
Maximum Power Dissipation 1W
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package MSTM
Win Source Part Number 153658-2SA1425-Y
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SA1425-Y CAD Model

Description

Product Description for 2SA1425-Y

The 2SA1425-Y is a high-performance PNP transistor that is widely used for amplification and switching applications in electronic circuits. Its compact design and robust construction make it an ideal choice for engineers and hobbyists alike. Its low saturation voltage and excellent current handling capabilities ensure efficient and reliable performance.

  • Applications:
    • Audio amplification systems
    • Switching circuits
    • Signal processing modules
    • Motor control circuits
  • Features & Benefits:
    • Low collector-emitter saturation voltage for enhanced efficiency
    • High current gain ensuring superior performance
    • Compact package for space-saving designs
    • Reliable performance under varying conditions
  • Additional Details:

    This transistor is commonly utilized in applications that require a consistent and responsive transistor for amplification and switching purposes. The 2SA1425-Y balances efficiency and performance, making it a go-to component for a wide range of electronic projects.

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